Image is for reference, please contact us to get the real picture
| Manufacturer Part Number: | SCT50N120 |
| Manufacturer: | STMicroelectronics |
| Part of Description: | SICFET N-CH 1200V 65A HIP247 |
| Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
| Stock Condition: | 2126 In Stock |
| Ship From: | Hong Kong |
| Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Stock Status: 2126
Minimum: 1
Call for price or sumbit a RFQ
US $40 by FedEx.
Arrive in 3-5 days
Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 150$,Overweight will be charged separately
| Type | Description |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 318W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247™ |
| Package / Case | TO-247-3 |
168 out of 176 (98%)
Customers recommended this product
The quality is very high, I am sure that is new and original. I will purchase again from them.
The parcel was well packed when received, thank you seller for fast response and good quality.
Trustable and helpful supplier. The communication is easy and fast. The whole picture is very positive.
Received the material on time with good quality, Demi Yang is Very easy to communicate with and a very supportive person.
