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| Manufacturer Part Number: | SCT50N120 |
| Manufacturer: | STMicroelectronics |
| Part of Description: | SICFET N-CH 1200V 65A HIP247 |
| Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
| Stock Condition: | 2126 In Stock |
| Ship From: | Hong Kong |
| Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Stock Status: 2126
Minimum: 1
Call for price or sumbit a RFQ
US $40 by FedEx.
Arrive in 3-5 days
Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 150$,Overweight will be charged separately
| Type | Description |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 318W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247™ |
| Package / Case | TO-247-3 |
168 out of 176 (98%)
Customers recommended this product
Very helpful supplier. Totally satisfied.
Thank you for your prompt and courteous service from ordering to shipping.
The quality is very high, I am sure that is new and original. I will purchase again from them.
Received the material on time with good quality, Demi Yang is Very easy to communicate with and a very supportive person.
